Low forward drop high voltage trench MOS Barrier Schottky rectifier with linearly graded doping profile

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 187-190

  Mahalingam, Srikanth ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DOPING;

GRADED DOPED TRENCH MOS BARRIER SCHOTTKY (GD-TMBS) RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0031621611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)