2nd generation dual gate MOS thyristor

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 129-132

  Iwamuro, Noriyuki ^a   Harada, Yuichi ^a   Iwaana, Tadayoshi ^a   Hoshi, Yasuyuki ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; GATES (TRANSISTOR); POWER ELECTRONICS; RESONANT CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS;

DUAL GATE THYRISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); TURN OFF LOSS; VOLTAGE DROP;

MOSFET DEVICES;

EID: 0029724478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)