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Volumn 58, Issue 16, 1998, Pages 10401-10414
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Theoretical and experimental study of the quasistatic capacitance of metal-insulator-hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model
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UNIV PARIS SUD
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0012789147
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.58.10401 Document Type: Article |
Times cited : (11)
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References (33)
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