Theoretical and experimental study of the quasistatic capacitance of metal-insulator-hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 16, 1998, Pages 10401-10414

  Kleider, J ^a   Dayoub, F ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012789147     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.10401     Document Type: Article

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