Two-dimensional potential profile measurement of GaAs HEMT's by Kelvin probe force microscopy

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 423-425

  Mizutani, Takashi ^a,b   Arakawa, Masashi ^a   Kishimoto, Shigeru ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b IEEE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; VOLTAGE MEASUREMENT;

KELVIN PROBE FORCE MICROSCOPY (KFM); TWO DIMENSIONAL POTENTIAL PROFILE MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031235405     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622517     Document Type: Article

References (7)

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6. M. Arakawa, S. Kishimoto, and T. Mizutani, "Kelvin probe force microscopy for potential distribution measurement of cleaved surface Of GaAs devices," in Ext. Abst. 1996 Int. Conf. Solid-State Dev. Mater., 1996, pp. 100-102.
7. T. Mizutani, M. Arakawa, and S. Kishimoto, "Potential profile measurement of cleaved surface of GaAs HEMT's by Kelvin probe force microscopy," in IEDM Tech. Dig., 1996, pp. 31-34.