Epitaxial (Ba,Sr)TiO3 capacitors with extremely high dielectric constant for DRAM applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 257-260

  Fukushima, N ^a   Abe, K ^a   Izuha, M ^a   Schimizu, T ^a   Kawakubo, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM);

BARIUM TITANATE; EPITAXIAL GROWTH; LEAKAGE CURRENTS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

CAPACITORS;

EID: 84886448164     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)