Novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 245-248

  Khamankar, R B ^a   Kressley, M A ^a   Visokay, M R ^a   Moise, T ^a   Xing, G ^a   Nemoto, S ^a   Okuno, Y ^a   Fang, S J ^a   Wilson, A M ^a   Gaynor, J F ^a   Hurd, T Q ^a   Crenshaw, D L ^a   Summerfelt, S ^a   Colombo, L ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK END PROPAGATION; DYNAMIC RANDOM ACCESS MEMORY (DRAM); ELECTRICAL STRESS RELIABILITY MEASUREMENTS;

BARIUM TITANATE; CAPACITORS; OXIDATION RESISTANCE; PLATINUM; THERMODYNAMIC STABILITY;

RANDOM ACCESS STORAGE;

EID: 84886448049     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)