Composite channel HEMTs for millimeter-wave power applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 207-210

  Chevalier, P ^a   Wallart, X ^a   Mollot, F ^a   Bonte, B ^a   Fauquembergue, R ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSCONDUCTANCE;

COMPOSITE CHANNEL TRANSISTORS; GAS SOURCE MOLECULAR BEAM EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032296137     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)