Identification of bandgap states in semiconductors by transmutation of implanted radioactive tracers

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 113-118

  Achtziger, N ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Bandgap Levels; DLTS; Radioactive Isotopes; Radiotracer

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON CARBIDE;

RADIOTRACER SPECTROSCOPY;

RADIOISOTOPES;

EID: 0030652612     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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