Scandium correlated deep levels in silicon

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6286-6292

  Achtziger, Norbert ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042000490     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363648     Document Type: Article

References (25)

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15. See Ref. 13, p. 375.
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22. T values of different levels are to be compared.
23. No electrically inactive Ti site has been reported. In the present experiment, the Ti concentration is below the solubility at the annealing temperature and a complexing or clustering of Ti during quenching is not expected because of the low mobility of Ti.
24. The pulse length was varied between 10 μs and 100 ms. The pulse length dependence of the peak height was also examined for the peaks C, D, F, G, H, and I. These peaks were not sensitive to the pulse length in the range examined as it is expected from their comparatively large cross sections σ (Table I).
25. See Ref. 13, p. 433.