Silicon carbide - A promising wide-band-gap semiconductor for electronic devices

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 115-126

  Pensl, G ^a   Troffer, Th ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ENERGY GAP; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT;

DEVICE DEVELOPMENT; ELECTRONIC DEVICE; ENVIRONMENTAL CONDITIONS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 17544380992     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (75)

1. Lester, S.D., Ponce, F.A., Craford, M.G., Steigerwald, D.A.: Appl.Phys.Lett, 1995,66, 1249
2. Nakamura, S., Mukai, T., Senoh, M.: Appl.Phys.Lett., 1994, 64, 1687
3. Pensl, G., Helbig, R.: Festkörperprobleme/Advances in Solid State Physics, Vol.30, ed.by U.Rössler (Vieweg, Braunschweig, 1990), 133
4. Ivanov, P.A., Chelnokov, V.E.: Semicond.Sci.Technol., 1992, 7, 863
5. Palmour, J.W., Edmond, J.A., Kong, H.S., Carter Jr., C.H.: Physica. 1993, B185, 461
6. Morkoç, H., Strite, S., Gao, G.B., Lin, M.E., Burns, M.: J.Appl.Phys., 1994, 76, 1363
7. Jepps, N.W., Page, T.F.: Progress in Crystal Growth and Characterization, Crystal Growth and Characterization of Polytype Structures. Vol.7, (Pergamon, New York, 1983), ed. by P.Krishna, 259
8. Patrick, L.: Phys.Rev., 1972, B5, 2198
9. Winnacker, K., Weingärtner, E.: Anorganische Technologie II, (Hammer Verlag, München, 1950), 284
10. Lely, J.A.: Ber.Dt.Keram.Ges., 1955, 32, 229
11. Tairov, Y.M., Tsvetkov, V.F.: J.Cryst.Growth, 1981, 52, 146
12. Ziegler, G., Lanig, P., Theis, D., Weyrich, C.: IEEE Trans.Electron Dev., 1983, ED 30, 277
13. Matsunami, H.: Optoelectronics-Devices and Technologies, 1987, 2, 29
14. Kong, H., Kim, J.A., Edmond, J.A., Palmour, J.W., Ryu, J., Carter, Jr., C.H., Glass, J.T., Davis, R.F.: Mat.Res.Soc.Symp.Proc., 1987, 97, 233
15. Barrett, D.L., Seidensticker, R.G., Gaida, W., Hopkins, R.H.: J.Crystal Growth, 1993, 128, 358
16. Koga, K., Yamaguchi, T.: Prog.Crystal Growth and Charact., 1991, 23, 127
17. Stein, R.A., Lanig, P., Leibenzeder, S.: Materials Science and Engineering, 1992, B11, 69
18. Koga, K., Nakata, T., Ueda, Y., Matsushita, Y., Fujikawa, Y., Uetani, T., Niina, T.: The Electrochemical Society. Extended Abstracts, 1989, 89-2. Hollywood, Florida, 689
19. Hobgood, H.M., McHugh, J.P., Greggi, J., Hopkins, R.H., Skowronski, M.: Inst. Phys. Conf. Ser. No. 137, 1993, 7
20. Koga, K.: private communication, 1994
21. Takahashi, J., Kanaya, M., Fujiwara, Y.: J.Crystal Growth, 1994, 135, 61
22. Hoffmann, L., Ziegler, G., Theis, D., Weyrich, C.: J.Appl. Phys., 1982, 53, 6962
23. Kaneda, S., Sakamoto, Y., Mihara, T., Tanaka, T.: J.Crystal Growth, 1987, 81, 536
24. Yoshinobu, T., Nakayama, N., Shiomi, H., Fuyuki, T., Matsunami, H.: J.Crystal Growth, 1990, 99, 520
25. Powell, J.A., Petit, J.B., Edgar, J.H., Jenkins, I.G., Matus, L.G., Yang, J.W., Pirouz, P., Choyke, J.W., Clemen, L., Yoganathan, M.: Appl.Phys.Lett., 1991, 59, 333
26. Burk, A.A., Barrett, H.M., Hobgood, H.M., Siergiej, R.R., Braggins, T.T., Clarke, R.C., Eldridge, G.W., Brandt, C.D., Larkin, D.J., Powell, J.A., Choyke, W.J.: Inst. Phys. Conf. Ser. No. 137, 1993, 29
27. Itoh, A., Kimoto, T., Matsunami, H.:Appl.Phys.Lett., 1994, 65, 1400
28. Kordina, O., Henry, A., Bergman, J.P., Son, N.T., Chen, W.M., Hallin, C., Janzen, E.: Appl.Phys.Lett., 1995, 66, 1373
29. Nishino, S., Powell, J.A., Will, H.A.: Appl.Phys.Lett.1983, 42, 460
30. Powell, J.A., Larkin, D.J., Matus, L.G., Choyke, W.J., Bradshaw, J.L., Henderson, L., Yoganathan, M., Yang, J., Pirouz, P.: Appl.Phys.Lett., 1990, 56, 1353
31. Matsunami, H.: Optoelectronics Devices and Technologies, 1987, 2, 29
32. Woodbury, H.H., Ludwig, G.W.: Phys.Rev., 1961, B124, 1083
33. Kalabukhova, E.N., Kabiding, N.N., Lukin, S.N.: Sov.Phys.Solid State, 1987, 29, 1461
34. Suttrop, W., Pensl, G., Choyke, W.J., Stein, R., Leibenzeder, S.: J.Appl.Phys., 1992, 72, 3708
35. Götz, W., Schöner, A., Pensl, G., Suttrop, W., Choyke, W.J., Stein, R., Leibenzeder, S.: J.Appl.Phys., 1993, 73, 3332
36. Troffer, T., Götz, W., Schöner, A., Suttrop, W., Pensl, G., Devaty, R.P., Choyke, W.J.: Inst.Phys.Conf.Ser.No. 137, 1993, 173
37. Pensl, G., Choyke, W.J.: Physica, 1993, B185, 264
38. Schöner, A.: Dissertation, Erlangen, 1994
39. Pearson, G.L., Bardeen, J.: Phys.Rev., 1949, 75, 865
40. Alekseenko, M.V., Zabrodskii, A.G., Timofeev, M.P.: Sov.Phys.Semicond., 1987, 21, 494
41. Shklovskii, B.I., Efros, A.L.: Sov.Phys.Semicond., 1980, 14, 487
42. Lee, T.F., McGill, T.C.: J.Appl.Phys., 1975, 46, 373
43. Karmann, S., Suttrop, W., Schöner, A., Schadt, M., Haberstroh, C., Engelbrecht, F., Helbig, R., Pensl, G.: J.Appl.Phys., 1992, 72, 5437
44. Schaffer, W.J., Kong, H.S., Negley, G.H., Palmer, J.W.: Inst.Phys.Conf.Ser.No.HZ, 1993, 155
45. Schadt, M., Pensl, G., Devaty, R.P., Choyke, W.J., Stein, R., Stephani, D.: Appl.Phys. Lett., 1994, 65, 3120
46. Götz, W., Schöner, A., Suttrop, W., Pensl, G., Choyke, W.J., Stein. R.A., Leibenzeder, S.: Materials Science Forum vols. 143-147, 1994, 69
47. Colwell, P.J., Klein, M.V.: Phys.Rev., 1972, B6, 498
48. Faulkner, R.A.: Phys.Rev., 1969, 184, 173
49. Garlach, B., Pollmann, J.: Phys.Status Solidi, 1975, B67, 93
50. Dean, P.J., Choyke, W.J., Patrick, W.J.: J.of Lum., 1977, 15, 299
51. Kaplan, R., Wagner, R.J., Kim, H.J., Davis, R.F.: Solid State Commun., 1981, 39, 163
52. Karch, K., Wellenhofer, G., Pavone, P., Rössler, U., Strauch, D.: Proc. 22nd Int. Conf. Phys. Semicond., ed. D.J.Loockwood, (World Scientific Singapore. Vancover, 1995), 401
53. Kuckell, P., Wenzien, B., Bechstedt, F.: Phys.Rev., 1994, B50, 10761
54. Chen, W.M., Kordina, O., Konstantinov, A.O., Monemar, B., Janzen, E., Kofmann, D.M., Volm, D., Drechsler, M., Meyer, B.K.: Appl.Phys.Lett., 1995, 66, 1074
55. Holm, D., Meyer, B.K., Hofmann, D.M., Drechsler, M., Chen, W.M., Janzen, E., Kordina, Verhandl. DPG (VI), 1995, 30, HL20.40
56. strop, W., Pensl, G., Lanig, P.: Appl.Phys., 1990, A51, 231
57. Vodakov, Y.A., Zhumaev, N., Zverev, B.P., Lomakina, G.A., Mokohov, E.N., Oding, V.G., Semenov, V.V., Simakhin, Y.F.: Sov.Phys.Semicond., 1977, 11, 214
58. Petrenko, T.L., Teslenko, V.V., Mokhov, E.N.: Sov.Phys.Semicond., 1992, 26, 874
59. Müller, R., Feege, M., Greulich-Weber, S., Spaeth, J.-M.: Semicond. Sci. Technol., 1993, 8, 1377
60. Reinke, J., Greulich-Weber, S., Spaeth, J.-M., Kalabukhova, E.N., Lukin, S.N., Mokhov, E.N.: Inst. Phys. Conf. Ser. No. 137, 1993, 211
61. Ikeda, M., Matsunami, H., Tanaka, T.: Phys.Rev., 1980, B22, 2842
62. Zanmarchi, G.: J.Phys.Chem. Solids. 1968, 29, 1727
63. Anikin, M.H., Lebedev, A.A., Syrkin, A.L., Suvorov, A.V.: Sov.Phys. Semicond., 1985, 19, 69
64. Troffer, T., Häßler, C., Pensl, G., Rupp, R., Stein, R., Stephani, D.: Verhandl. DPG (VI), 1995, 30, HL30.7
65. Saddow, S.E., Lang, M., Dalibor, T., Pensl, G., Neudeck, P.G., to be published in Appl.Phys. Lett., June 1995
66. Johnson, E.O.: RCA Rev., 1965, 26, 163
67. Keyes, R.W.: Proc.IEEE, 1972, 60, 225
68. Shenai, R.S., Scott, R.S., Baliga, B.J.: IEEE Transactions on Electron Devices, 1989, 36, 1811
69. Baliga, B.J.: IEEE Electron Device Lett., 1989, 10, 455
70. Ruff, M., Mitlehner, H., Helbig, R.: IEEE Transactions on Electron Devices. 1994, 41, 1040
71. Tornbold, O., Breitholtz, B., Östling, M., Lindefelt, U.: Physica Scripta, 1994, T54, 60
72. Bhatnagar, M., Baliga, B.J.: IEEE Transactions on Electronic Devices. 1993, 40, 645
73. Funaki, H., Nakagawa, A., Omura, I.: 5th Int.Symposium on Semiconductor Devices and IC's. 1993
74. Kimoto, T., Urushidani, T., Kobayashi, S., Matsunami, H.: IEEE Electron Device Letters, 1993, 14, 548
75. Dohnke, K., Rupp, R., Peters, D., Völkl, J., Stephani, D.: Inst.Phys.Conf.Ser.No. 137, 1993, 625