Effects of high-temperature anneals on 4H-SiC Implanted with Al or Al and Si

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5613-5618

  Jones, K A ^a   Shah, P B ^a   Zheleva, T S ^a   Ervin, M H ^a   Derenge, M A ^a   Freitas, J A ^b   Harmon, S ^c   McGee, J ^c   Vispute, R D ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c University of Maryland   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRON-BEAM ENERGY; EPITAXIAL FILMS; SHEET RESISTANCE;

ACTIVATION ENERGY; ALUMINUM; ANNEALING; CATHODOLUMINESCENCE; DATA REDUCTION; LEAKAGE CURRENTS; MOSFET DEVICES; NUCLEATION; SILICON CARBIDE;

HYDROGEN;

EID: 9944259107     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1798404     Document Type: Article

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