Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2665-2670

  Tucker, Jesse B ^b   Rao, Mulpuri V ^a,c   Papanicolaou, Nicolas A ^d   Mittereder, Jeff ^d   Elasser, Ahmed ^b   Clock, A William ^b   Ghezzo, Mario ^a,b   Holland, O W ^e   Jones, Kenneth A ^a,f  

^a IEEE

^b GE GLOBAL RESEARCH   (United States)

^c GEORGE MASON UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

^f U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Aluminum; Boron; Diode; Ion implantation; Nitrogen; Planar; Silicon Carbide; Transient

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ANNEALING; BORON; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TRANSIENTS;

DOUBLE IMPLANTATION;

SEMICONDUCTOR DIODES;

EID: 0035693943     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974687     Document Type: Article

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