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Volumn , Issue , 2004, Pages 647-650
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Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPE
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTATIONAL GEOMETRY;
FABRICATION;
METALLORGANIC VAPOR PHASE EPITAXY;
NANOSTRUCTURED MATERIALS;
PHOTODETECTORS;
SEMICONDUCTOR GROWTH;
GROWTH MECHANISM;
NANOWIRES;
PATTERN GEOMETRY;
SELECTIVE AREA (SA);
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 23744445352
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (15)
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