Formation of 0.5 μm-period GaAs network structures for two-dimensional photonic crystals by selective area metal-organic vapor phase epitaxy

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 191-196

  Akabori, M ^a   Motohisa, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

PHOTONIC CRYSTALS; SELECTIVE AREA METALLORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034425094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)