Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well

Applied Physics Letters

Volumn 81, Issue 2, 2002, Pages 346-348

  Malyarchuk, V ^a   Tomm, J W ^a   Talalaev, V ^a   Lienau, Ch ^a   Rinner, F ^b   Baeumler, M ^b  

^a MAX BORN INSTITUT   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; EXCITATION INTENSITY; MICROMETER LENGTHS; MICROSCOPIC TECHNIQUES; NEAR-FIELD; NONRADIATIVE DEFECTS; PHOTOLUMINESCENCE SIGNALS; QUANTUM WELL; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; TRANSITION REGIONS; TWO DIMENSIONAL DIFFUSION;

DIFFUSION; PARTIAL DIFFERENTIAL EQUATIONS; PHOTOLUMINESCENCE; SURFACE DEFECTS; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956019039     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492307     Document Type: Article

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