Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5775-5780

  Zhao, Q T ^a   Kluth, P ^a   Bay, H L ^a   Lenk, St ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COBALT COMPOUNDS; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; HETEROJUNCTIONS; ION IMPLANTATION; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; OXIDATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ANISOTROPIC DIFFUSION; NANOPATTERNING; RAPID THERMAL OXIDATION;

EPITAXIAL GROWTH;

EID: 9944249668     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808246     Document Type: Article

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