Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 353-356

  Nguyen, Lam H ^a   Le Thanh, V ^b   Yam, V ^a   Debarre D ^a   Halbwax, M ^a   Bouchier, D ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GERMANIUM; NUCLEATION; OPTICAL PROPERTIES; OXIDATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA; ULTRAHIGH VACUUM; MULTILAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GERMANIUM; SILICON;

BUFFER LAYERS; SELECTIVE EPITAXIAL GROWTH (SEG); PHOTOLUMINESCENCE (PL) SPECTROSCOPY; STACKED LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1242332816     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303967     Document Type: Conference Paper

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