SCOPUS 정보 검색 플랫폼

Furukawa Review

Volumn , Issue 23, 2003, Pages 76-81

Improvement of MOCVD growth technique using CBr 4

(4) Arakawa, Satoshi a Ito, Mitsumasa a Nakasaki, Ryuusuke a Kasukawa, Akihiko a

a WE Team (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-TEMPERATURE REACTORS; SELECTIVITY; SMOOTH SURFACES;

CARBON INORGANIC COMPOUNDS; EPITAXIAL GROWTH; ETCHING; IMPURITIES; INTERFACES (MATERIALS); LIGHT AMPLIFIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON NITRIDE; SURFACE STRUCTURE;

CHEMICAL REACTORS;

EID: 9644260586 PISSN: 13481797 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

References (15)

1
- 0028761982
- K. Fujii, K. Shimoyama, H. Miyata, Y. Inoue, N. Hosoi and H. Gotoh, J. Crystal Growth, 145 (1994) 277
- (1994) J. Crystal Growth , vol.145 , pp. 277
- Fujii, K.¹ Shimoyama, K.² Miyata, H.³ Inoue, Y.⁴ Hosoi, N.⁵ Gotoh, H.⁶

2
- 0342832924
- Tsukuba, Japan
- T. Tsuchiya, in: Proc. 10th Int. Conf. Indium Phosphide and Related Material, Tsukuba, Japan, 1998, p325
- (1998) Proc. 10th Int. Conf. Indium Phosphide and Related Material , pp. 325
- Tsuchiya, T.¹

3
- 0033148801
- M. Yokoyama, Y. Matsukura and H. Tanaka, J. Crystal Growth, 203 (1999) 464
- (1999) J. Crystal Growth , vol.203 , pp. 464
- Yokoyama, M.¹ Matsukura, Y.² Tanaka, H.³

4
- 0028761877
- Y. Inoue, K. Shimokawa, K. Fujii, N. Hosoi, H. Gotoh: J. Cryst. Growth 145 (1994) 881.
- (1994) J. Cryst. Growth , vol.145 , pp. 881
- Inoue, Y.¹ Shimokawa, K.² Fujii, K.³ Hosoi, N.⁴ Gotoh, H.⁵

5
- 0031170115
- S. Ikawa and M. Ogura: IEEE Photon. Technol. Lett. 9 (1997) 719.
- (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 719
- Ikawa, S.¹ Ogura, M.²

6
- 0032477182
- D. Bertone, R. Campi, G. Morello: J. Cryst. Growth 195 (1998) 624.
- (1998) J. Cryst. Growth , vol.195 , pp. 624
- Bertone, D.¹ Campi, R.² Morello, G.³

7
- 0034505626
- P. Wolfram, W. Ebert, J. Kreissl, N. Grote: J. Cryst. Growth 221 (2000) 177
- (2000) J. Cryst. Growth , vol.221 , pp. 177
- Wolfram, P.¹ Ebert, W.² Kreissl, J.³ Grote, N.⁴

8
- 0032477202
- H. Q. Hou, B. E. Hammons, W. G. Breiland: J. Crys. Growth 195 (2000) 199
- (2000) J. Crys. Growth , vol.195 , pp. 199
- Hou, H.Q.¹ Hammons, B.E.² Breiland, W.G.³

9
- 0031546739
- K. Tateno, Y. Kohama and C. Amano, J. Crystal Growth, 172 (1997) 5
- (1997) J. Crystal Growth , vol.172 , pp. 5
- Tateno, K.¹ Kohama, Y.² Amano, C.³

10
- 0033079880
- D. Keiper, R. Westphalen and G. Langren, J. Crystal Growth, 197 (1999) 25
- (1999) J. Crystal Growth , vol.197 , pp. 25
- Keiper, D.¹ Westphalen, R.² Langren, G.³

11
- 0036478762
- S. Arakawa, M. Itoh and A. Kasukawa, Jap. J. Appl. Phys., 41 (2002) 1076
- (2002) Jap. J. Appl. Phys. , vol.41 , pp. 1076
- Arakawa, S.¹ Itoh, M.² Kasukawa, A.³

12
- 0034498373
- S. Arakawa, M. Itoh and A. Kasukawa, J. Crystal Growth, 221 (2000) 183
- (2000) J. Crystal Growth , vol.221 , pp. 183
- Arakawa, S.¹ Itoh, M.² Kasukawa, A.³

13
- 0024766173
- H. Seki and A. Koukitsu: J. Cryst. Growth, 98 (1989) 118.
- (1989) J. Cryst. Growth , vol.98 , pp. 118
- Seki, H.¹ Koukitsu, A.²

14
- 0030563095
- M. Tsuji, K. Makita, T. Takeuchi and K. Taguchi, J. Crystal Growth, 162 (1996) 25.
- (1996) J. Crystal Growth , vol.162 , pp. 25
- Tsuji, M.¹ Makita, K.² Takeuchi, T.³ Taguchi, K.⁴

15
- 0032638282
- Davos, Switzerland
- K. Takemasa, H. Wada and T. Kamijoh, in: Proc. 11th Int. Conf. Indium Phosphide and Related Material, Davos, Switzerland, 1999, p393
- (1999) Proc. 11th Int. Conf. Indium Phosphide and Related Material , pp. 393
- Takemasa, K.¹ Wada, H.² Kamijoh, T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.