Selective growth of InAlAs by low pressure metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 162, Issue 1-2, 1996, Pages 25-30

  Tsuji, Masayoshi ^a   Makita, Kikuo ^a   Takeuchi, Takeshi ^a   Taguchi, Kenko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SILICA; SUBSTRATES;

BANDGAP ENERGY SHIFT; GROWTH RATE ENHANCEMENT; INDIUM ALUMINUM ARSENIDE; PHOTOLUMINESCENCE SPECTRUM; SELECTIVE GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030563095     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00947-7     Document Type: Article

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