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Volumn 195, Issue 1-4, 1998, Pages 624-629
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Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON;
CARBON TETRACHLORIDE;
ETCHING;
HYDROGEN;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
PYROLYSIS;
QUANTUM EFFICIENCY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
CHLOROFORM;
CHLOROPROPANE;
DICHLOROMETHANE;
LOW-PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION;
TERTIARYBUTYLPHOSPHINE;
SEMICONDUCTOR LASERS;
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EID: 0032477182
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00671-X Document Type: Article |
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Times cited : (25)
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References (5)
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