In-situ etching of semiconductor with CBr4 in metalorganic chemical vapor deposition (MOCVD) reactor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1076-1079

  Arakawa, Satoshi ^a   Itoh, Mitsumasa ^a   Kasukawa, Akihiko ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

AlGaInAs; CBr4; Etching stop layer; In situ etching; MOCVD; Regrowth

Indexed keywords

ALUMINUM COMPOUNDS; CLADDING (COATING); EPITAXIAL GROWTH; ETCHING; IMPURITIES; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES;

ETCHING-STOP LAYERS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0036478762     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1076     Document Type: Conference Paper

References (9)