In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 199-204

  Hou, H Q ^a,b   Hammons, B E ^a   Breiland, W G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b EMCORE Corporation   (United States)

Author keywords

AsCl3; In situ etching; MOVPE; Selective etching

Indexed keywords

ACTIVATION ENERGY; ARSENIC COMPOUNDS; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

SELECTIVE ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032477202     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00733-7     Document Type: Article

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