MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 177-182

  Wolfram, P ^a   Ebert, W ^a   Kreissl, J ^a   Grote, N ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITROGEN; REACTIVE ION ETCHING; SUBSTRATES;

IN SITU SUBSTRATE CLEANING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034505626     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00682-5     Document Type: Article

References (9)

1. M.J. Harlow et al., Proceedings 7th IPRM, 6 Sapporo, 1995, p. 329.
2. D.G. Knight, G. Kelly, R.A. Bruce, Proceedings of EW MOVPE, Berlin, 1997, paper D3.
3. Caneau C., Bhat R., Koza M., Hayes J.R., Esagui R. J. Crystal Growth. 107:1991;203.
4. Nordell N., Borglind J., Landgren G. J. Crystal Growth. 125:1992;5976.
5. Bertone D., Campi R., Morello G. J. Crystal Growth. 195:1998;624.
6. Bertone D., Fang R.Y., Morello G., Meliga M. J. Electrochem. Soc. 146:1999;1167.
7. Kondow M., Shi B.Q., Tu C.W. Jpn. J. Appl. Phys. 38:1999;L617.
8. Bach H.G.et al. Inst. Phys. Conf. Ser. 166:2000;415.
9. C. Schramm et al., Proceedings 12th IPRM, Williamsburg, USA, 2000, p. 408.