A new precursor for the chemical vapor deposition of tantalum nitride films

Journal of Materials Chemistry

Volumn 14, Issue 21, 2004, Pages 3239-3245

  Lehn, Jean Sébastien M ^a   Van Der Heide, Paul ^a   Wang, Yongqiang ^b   Suh, Seigi ^a   Hoffman, David M ^a  

^a University of Houston   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOLS; CHEMICAL VAPOR DEPOSITION; COMPLEXATION; DIFFUSION; MOLECULAR STRUCTURE; NITRIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; TANTALUM; THERMOOXIDATION; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMINO LIGANDS; PRECURSORS; TANTALUM NITRIDE FILMS; TETRAHEDRAL GEOMETRY;

THIN FILMS;

NITROGEN DERIVATIVE; TANTALUM;

CHEMICAL VAPOR DEPOSITION; COMPLEX FORMATION; CONFERENCE PAPER; FILM; OXIDATION; SPECTROMETRY; STOICHIOMETRY; SYNTHESIS; VAPORIZATION; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 9244264381     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b408180c     Document Type: Conference Paper

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