Offsets and polarization at strained AlN/GaN polar interfaces

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 923-928

  Bernardini, F ^a   Fiorentini, V ^a   Vanderbilt, D ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

FIRST-PRINCIPLES CALCULATIONS; INTERFACE ASYMMETRY; LATTICE MISMATCH; NITRIDE SEMICONDUCTORS; STRAINED POLAR INTERFACES; VALENCE BAND OFFSETS;

HETEROJUNCTIONS;

EID: 0030704011     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)