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Volumn 60, Issue 3, 1999, Pages 1480-1483

Transverse effective charge and its pressure dependence in GaN single crystals

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Indexed keywords


EID: 0001320132     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.1480     Document Type: Article
Times cited : (30)

References (26)
  • 11
    • 0030718034 scopus 로고    scopus 로고
    • Gallium Nitride and Related Materials II
    • C.R. Abernathy, H. Amano, and J.C. Zolper, Materials Research Society, Pittsburgh
    • H. Siegle, A.R. Goni, C. Thomsen, C. Ullrich, K. Syassen, D.J. As, and D. Schikora, in, Gallium Nitride and Related Materials II, edited by C.R. Abernathy, H. Amano, and J.C. Zolper, MRS Symposia Proceedings, No. 468 (Materials Research Society, Pittsburgh, 1997), p. 225.
    • (1997) MRS Symposia Proceedings , Issue.468 , pp. 225
    • Siegle, H.1    Goni, A.R.2    Thomsen, C.3    Ullrich, C.4    Syassen, K.5    As, D.J.6    Schikora, D.7
  • 23
    • 0003537065 scopus 로고
    • D.K. Ferry, J.R. Barker, and C. Jacobini, Plenum, New York
    • P. Vogl, in, Physics of Nonlinear Transport in Semiconductors, edited by D.K. Ferry, J.R. Barker, and C. Jacobini (Plenum, New York, 1980), pp. 75–116.
    • (1980) Physics of Nonlinear Transport in Semiconductors , pp. 75-116
    • Vogl, P.1
  • 25


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.