Ab initio study of electronic properties of zincblende AlN and deformation potentials under hydrostatic stress

Materials Chemistry and Physics

Volumn 82, Issue 2, 2003, Pages 471-477

  Merad, A E ^a   Kanoun, M B ^a   Cibert, J ^b   Aourag, H ^c   Merad, G ^a  

^a UNIVERSITY OF TLEMCEN   (Algeria)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITÉ DE TECHNOLOGIE DE BELFORT MONTBÉLIARD   (France)

Author keywords

AlN; Deformation potentials; Electronic properties; FP LAPW

Indexed keywords

DEFORMATION; ELASTICITY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HYDROSTATIC PRESSURE; LIGHT EMITTING DIODES; PROBABILITY DENSITY FUNCTION;

CHARGE DENSITY;

ALUMINUM NITRIDE;

EID: 0041508952     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00276-1     Document Type: Article

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