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Volumn 91, Issue 8, 2002, Pages 4983-4987

Structural properties of undoped and doped cubic GaN grown on SiC(001)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION MECHANISMS; DOPED LAYERS; GAN LAYERS; INTERFACIAL REGION; LAYER THICKNESS; NUCLEATION SITES; RESIDUAL IMPURITIES; SECONDARY ION MASS SPECTROSCOPY; THIN LAYERS; X-RAY DIFFRACTION MEASUREMENTS;

EID: 0037091690     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456243     Document Type: Article
Times cited : (40)

References (21)
  • 14
    • 0000524001 scopus 로고    scopus 로고
    • jaJAPIAU 0021-8979
    • B. Daudin et al., J. Appl. Phys. 84, 2295 (1998). jap JAPIAU 0021-8979
    • (1998) J. Appl. Phys. , vol.84 , pp. 2295
    • Daudin, B.1
  • 17
    • 0032094136 scopus 로고    scopus 로고
    • jcr JCRGAE 0022-0248
    • H. Okumura et al., J. Cryst. Growth 189/190, 390 (1998). jcr JCRGAE 0022-0248
    • (1998) J. Cryst. Growth , vol.189-190 , pp. 390
    • Okumura, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.