Characterization of orientation-dependent etching properties of single-crystal silicon: Effects of KOH concentration

Sensors and Actuators, A: Physical

Volumn 64, Issue 1, 1998, Pages 87-93

  Sato, Kazuo ^a   Shikida, Mitsuhiro ^a   Matsushima, Yoshihiro ^a   Yamashiro, Takashi ^a   Asaumi, Kazuo ^b   Iriye, Yasuroh ^b   Yamamoto, Masaharu ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b Fuji Research Institute Corporation   (Japan)

^c Aichi Prefectural Government   (Japan)

Author keywords

Anisotropic etching; Orientation dependence; Potassium hydroxide; Single crystal silicon

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DATABASE SYSTEMS; ETCHING; NUMERICAL METHODS; POTASSIUM COMPOUNDS; SINGLE CRYSTALS; TEMPERATURE;

ANISOTROPIC ETCHING; ORIENTATION DEPENDENCE; POTASSIUM HYDROXIDE;

SEMICONDUCTING SILICON;

EID: 0031700033     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01658-0     Document Type: Article

References (8)

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