Simulation of anisotropic wet chemical etching using a physical model

Sensors and Actuators, A: Physical

Volumn 84, Issue 3, 2000, Pages 324-329

  Van Veenendaal, E ^a   Nijdam, A J ^b   Van Suchtelen, J ^a,b   Sato, K ^c   Gardeniers, J G E ^b   Van Enckevort, W J P ^a   Elwenspoek, M ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL ORIENTATION; ETCHING; MODELS; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ANISOTROPIC WET CHEMICAL ETCHING;

SILICON SENSORS;

EID: 0034272935     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00362-9     Document Type: Article

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