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Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3796-3798

Real-time observations of interface formation for barium strontium titanate films on silicon

(5) Mueller, A H a Suvorova, N A a Irene, E A a Auciello, O b Schultz, J A c

a University of North Carolina at Chapel Hill (United States)

b ARGONNE NATIONAL LABORATORY (United States)

c Ionwerks (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM-STRONTIUM TITANATE FILMS; BST FILM; IN-SITU; INTERFACE FORMATION; INTERFACE LAYER; ION SCATTERING; ION SPUTTERING; OXIDIZED SILICON SUBSTRATES; PHOTON ENERGY; REAL TIME; REAL-TIME OBSERVATION; SPECTROMETRY TECHNIQUE; THERMALLY OXIDIZED SILICON; TIME OF FLIGHT; TIO;

BARIUM; BARIUM TITANATE; FILM GROWTH; INTERFACES (MATERIALS); REFRACTIVE INDEX; SILICON OXIDES; SPECTROMETRY; SPECTROSCOPIC ELLIPSOMETRY; STRONTIUM; STRONTIUM TITANATES;

BARIUM STRONTIUM TITANATE;

EID: 79955998846 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1479451 Document Type: Article

Times cited : (21)

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