Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II. Comparison with Experiment and Discussion

Journal of the Electrochemical Society

Volumn 126, Issue 9, 1979, Pages 1523-1530

  Ho, C P ^a   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

dopant effects; interstitials; oxidation kinetics; point defects; silicon dioxide; vacancies

Indexed keywords

INTEGRATED CIRCUITS;

SEMICONDUCTOR DEVICES;

EID: 0018517788     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129321     Document Type: Article

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