Study of tunneling current oscillation dependence on SiO2 thickness and si roughness at the Si/SiO2 interface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 1, 1995, Pages 47-53

  Zafar, S ^a   Liu, Q ^a   Irene, E A ^a  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRON SCATTERING; INTERFACES (MATERIALS); SILICA; SILICON; SURFACE ROUGHNESS; THERMOOXIDATION; THICKNESS MEASUREMENT; THIN FILMS; VOLTAGE MEASUREMENT;

CONDUCTION BAND; OSCILLATION AMPLITUDE; TUNNELING CURRENT;

OSCILLATIONS;

EID: 0029209553     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579442     Document Type: Article

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