Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 32, Issue 2, 2014, Pages

  Metzler, Dominik ^a   Bruce, Robert L ^b   Engelmann, Sebastian ^b   Joseph, Eric A ^b   Oehrlein, Gottlieb S ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL MODIFICATION; ETCHING; SILICA;

ATOMIC LAYER ETCHING; COMPLEX MATERIALS; LAYER THICKNESS; LOW-ENERGY AR; PERIODIC INJECTION; STEADY STATE; SURFACE COVERAGES; TEMPORAL VARIATION;

ION BOMBARDMENT;

EID: 85043660617     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.4843575     Document Type: Article

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