Effects of thermal annealing on n-type GaAs:V grown by MOCVD

Journal of Physics D: Applied Physics

Volumn 39, Issue 7, 2006, Pages 1337-1341

  Bchetnia, A ^a   Rebey, A ^a   Fave, J L ^b   Bourgoin, J C ^c   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

^c GESEC R and D   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM COMPOUNDS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

ANNEALING TEMPERATURES; GALLIUM VACANCIES; V-DOPED MATERIALS;

RAPID THERMAL ANNEALING;

EID: 33645074423     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/7/002     Document Type: Article

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