Low-temperature facile synthesis of ZnO rod arrays and their device applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 801-807

  Ling, B ^a   Wang, Y ^a   Sun, X W ^a,b   Dong, Z L ^c   Yang, N X ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TIANJIN UNIVERSITY   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

Author keywords

FETs; LEDs; photoluminescence (PL); Raman scattering; semiconductor growth

Indexed keywords

DEPOSITION; HETEROJUNCTIONS; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; NANORODS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; TEMPERATURE;

ANNEALING TREATMENTS; CONVENTIONAL TUBES; DEFECT-RELATED EMISSION; DEPOSITION TEMPERATURES; FETS; LUMINESCENCE PROPERTIES; POSTGROWTH ANNEALING; VAPOR PHASE TRANSPORT;

ZINC OXIDE;

EID: 85027942283     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2065795     Document Type: Article

References (43)

1. Z. L.Wang, "Nanostructures of zinc oxide," Mater. Today, vol. 7, pp. 26-33, May 2004.
2. X.W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, "Ultraviolet emission from a ZnO rod homojunction lightemitting diode," Appl. Phys. Lett., vol. 95, pp. 133124-1-133124-3, Sep. 2009.
3. P. C. Chang, Z. Fan, C. J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, "High-performance ZnO nanowire field effect transistors," Appl. Phys. Lett., vol. 89, pp. 133113-1-133113-3, Sep. 2006.
4. S. Xu, Y. Qin, C. Xu, Y. Wei, R. Yang, and Z. L. Wang, "Self-powered nanowire devices," Nat. Nanotechnol., vol. 5, pp. 366-373, Mar. 2010.
5. J.Kim, J.-H.Yun, C. H. Kim,Y. C. Park, J.Y.Woo, J. Park, J.-H. Lee, J.Yi, and C.-S. Han, "ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect," Nanotechnology, vol. 21, pp. 115205-1-115205-5, Mar. 2010.
6. P.-H. Yeh, Z. Li, and Z. L. Wang, "Schottky-gated probe-free ZnO nanowire biosensor," Adv. Mater., vol. 21, pp. 4975-4978, Sep. 2009.
7. D. K. Hwang, M. S. Oh, J. H. Lim, C. G. Kang, and S. J. Park, "Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO," Appl. Phys. Lett., vol. 90, pp. 021106-1-021106-3, Jan. 2007.
8. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, "Room-temperature ultraviolet nanowire nanolasers," Science, vol. 292, pp. 1897-1899, Jun. 2001. (Pubitemid 32538361)
9. C. X. Xu, X.W. Sun, and B. J. Chen, "Field emission from gallium-doped zinc oxide nanofiber array," Appl. Phys. Lett., vol. 84, pp. 1540-1542, Mar. 2004.
10. Y. X. Chen, M. Lewis, and W. L. Zhou, "ZnO nanostructures fabricated through a double-tube vapor-phase transport synthesis," J. Cryst. Growth, vol. 282, pp. 85-93, Aug. 2005. (Pubitemid 41023891)
11. L. Luo, B. D. Sosnowchik, and L. Lin, "Room temperature fast synthesis of zinc oxide nanowires by inductive heating," Appl. Phys. Lett., vol. 90, pp. 093101-1-093101-3, Feb. 2007.
12. J. Wang, C. Yang, P. Chen, C. Su, W. Chen, K. Chiu, and W. Chou, "Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy," Appl. Phys. A, vol. 97, pp. 553-557, Nov. 2009.
13. Y. Li, G.W. Meng, L. D. Zhang, and F. Phillipp, "Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties," Appl. Phys. Lett., vol. 76, pp. 2011-2013, Apr. 2000.
14. L. Vayssieres, K. Keis, S.-E. Lindquist, and A. Hagfeldt, "Purpose-built anisotropic metal oxide material: 3D highly oriented microrod array of ZnO," J. Phys. Chem. B, vol. 105, pp. 3350-3352, Apr. 2001.
15. Z. R. Tian, J. A. Voigt, J. Liu, B. McKenzie, M. J. McDermott, M. A. Rodriguez, H. Konishi, and H. Xu, "Complex and oriented ZnO nanostructures," Nat. Mater., vol. 2, pp. 821-826, Dec. 2003.
16. B. Ling, X. W. Sun, J. L. Zhao, Y. Q. Shen, Z. L. Dong, L. D. Sun, S. F. Li, and S. Zhang, "One-dimensional single-crystalline bismuth oxidemicro/nanoribbons:Morphology-controlled synthesis and luminescent properties," J. Nanosci. Nanotechnol., to be published.
17. Z. W. Pan, Z. R. Dai, and Z. L. Wang, "Nanobelts of semiconducting oxides," Science, vol. 291, pp. 1947-1949, Mar. 2001.
18. P. Yang and C. M. Lieber, "Nanostructured high-temperature superconductors: Creation of strong-pinning columnar defects in nanorod/superconductor composites," J. Mater. Res., vol. 12, pp. 2981-2996, Nov. 1997. (Pubitemid 127603923)
19. Z. R. Dai, Z.W. Pan, and Z. L.Wang, "Novel nanostructures of functional oxides synthesized by thermal evaporation," Adv. Funct. Mater., vol. 13, pp. 9-24, Jan. 2003.
20. Y. Yan, L. Zhou, L. Yu, and Y. Zhang, "Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature," Appl. Phys. A, vol. 93, pp. 457-465, Nov. 2008.
21. Y. Hao, G. Meng, C. Ye, and L. Zhang, "Controlled synthesis of In2 O3 octahedrons and nanowires," Cryst. Growth Des., vol. 5, pp. 1617-1621, May 2005. (Pubitemid 41032681)
22. L. Wang, X. Zhang, C. Shao, X. Hong, Q. Qiao, and Y. Liu, "Hexamethylenediamine-assisted hydrothermal preparation of uniform ZnO particles and their morphology-dependent photoluminescent properties," Mater. Chem. Phys., vol. 115, pp. 547-550, Jun. 2009.
23. R. M. Martin and T. C.Damen, "Breakdown of selection rules in resonance Raman scattering," Phys. Rev. Lett., vol. 26, pp. 86-88, Jan. 1971.
24. X.Wang, Q. Li, Z. Liu, J. Zhang, Z. Liu, and R.Wang, "Low- temperature growth and properties of ZnO nanowires," Appl. Phys. Lett., vol. 84, p. 4941, Jun. 2004.
25. S.-S. Lo and D. Huang, "Morphological variation and raman spectroscopy of ZnO hollow microspheres prepared by a chemical colloidal process," Langmuir, vol. 26, pp. 6762-6766, May 2010.
26. J. Meńendez and M. Cardona, "Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs," Phys. Rev. B, vol. 31, pp. 3696-3704, Mar. 1985.
27. K. A. Alim, V. A. Fonoberov, M. Shamsa, and A. A. Balandin, "Microraman investigation of optical phonons in ZnO nanocrystals," J. Appl. Phys., vol. 97, pp. 124313-1-124313-5, Jun. 2005.
28. Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, "Ultravioletemitting ZnO nanowires synthesized by a physical vapor deposition approach," Appl. Phys. Lett., vol. 78, pp. 407-409, Jan. 2001. (Pubitemid 33629913)
29. C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, "65 years of ZnO research-Old and very recent results," Phys. Status Solidi B, vol. 247, pp. 1424-1447, Jun. 2010.
30. B. Ling, X. W. Sun, Y. Q. Shen, and Z. L. Dong, "Hierarchical ZnO/Bi2 O3 nanostructures: Synthesis, characterization, and electron-beam modification," Appl. Phys. A, vol. 98, pp. 91-96, Jan. 2010.
31. A. B. Djurísíc and Y. H. Leung, "Optical properties of ZnO nanostructures," Small, vol. 2, pp. 944-961, Aug. 2006.
32. J. Liu, S. Lee, Y. H. Ahn, J.-Y. Park, and K. H. Koh, "Tailoring the visible photoluminescence of mass-produced ZnO nanowires," J. Phys. D, Appl. Phys., vol. 42, pp. 095401-1-095401-6, May 2009.
33. A. B. Djurísíc, Y. H. Leung, K. H. Tam, L. Ding, W. K. Ge, H. Y. Chen, and S. Gwo, "Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength," Appl. Phys. Lett., vol. 88, pp. 103107-1-103107-3, Mar. 2006.
34. Z. Gu, M. P. Paranthaman, J. Xu, and Z. W. Pan, "Aligned ZnO nanorod arrays grown directly on zinc foils and zinc spheres by a low-temperature oxidization method," ACS Nano, vol. 3, pp. 273-278, Jan. 2009.
35. J. Bao, M. A. Zimmler, F. Capasso, X. Wang, and Z. F. Ren, "Broadband ZnO single-nanowire light-emitting diode," Nano Lett., vol. 6, pp. 1719-1722, Aug. 2006. (Pubitemid 44327537)
36. H. Sun, Q. F. Zhang, and J. L. Wu, "Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure," Nanotechnology, vol. 17, pp. 2271-2274, May 2006.
37. B. Ling, X. W. Sun, J. L. Zhao, S. T. Tan, Z. L. Dong, Y. Yang, H. Y. Yu, and K. C. Qi, "Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode," Physica E, vol. 41, pp. 635-639, Feb. 2009.
38. L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, T. Wu, X. W. Sun, J. Wang, and T. Yu, "Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications," ACS Nano, vol. 3, pp. 700-706, Mar. 2009.
39. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, "Field-effect transistors based on single semiconducting oxide nanobelts," J. Phys. Chem. B, vol. 107, pp. 659-663, Jan. 2003.
40. J. Goldberger, D. J. Sirbuly, M. Law, and P. Yang, "ZnO nanowire transistors," J. Phys. Chem. B, vol. 109, pp. 9-14, Jan. 2005. (Pubitemid 40120935)
41. S.-S. Kwon, W.-K. Hong, G. Jo, J. Maeng, T.-W. Kim, S. Song, and T. Lee, "Piezoelectric effect on the electronic transport characteristics of ZnO nanowire field-effect transistors on bent flexible substrates," Adv. Mater., vol. 20, pp. 4557-4562, Dec. 2008.
42. S. H. Ko, I. Park, H. Pan, N. Misra, M. S. Rogers, C. P. Grigoropoulos, and A. P. Pisano, "ZnO nanowire network transistor fabrication on a polymer substrate by low-temperature, all-inorganic nanoparticle solution process," Appl. Phys. Lett., vol. 92, pp. 154102-1-154102-3, Apr. 2008.
43. Y.-Y. Noh, X. Cheng, H. Sirringhaus, J. I. Sohn, M. E. Welland, and D. J. Kang, "Ink-jet printed ZnO nanowire field effect transistors," Appl. Phys. Lett., vol. 91, pp. 043109-1-043109-3, Jul. 2007.