Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 4, 2009, Pages 635-639

  Ling, B ^a   Sun, X W ^a,b   Zhao, J L ^a   Tan, S T ^b   Dong, Z L ^c   Yang, Y ^a   Yu, H Y ^a   Qi, K C ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Heterojunction; Light emitting diode; UV emission; ZnO

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; DISTILLATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; PHASE INTERFACES; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

DC-MAGNETRON SPUTTERING; GREEN-BAND EMISSIONS; HETEROJUNCTION; HOLE INJECTIONS; LIGHT-EMITTING DIODE; RECOMBINATION EMISSIONS; RECTIFYING BEHAVIORS; REVERSE CURRENTS; ROOM TEMPERATURES; SI SUBSTRATES; UV EMISSION; VAPOR-PHASE TRANSPORT METHODS; ZNO; ZNO NANORODS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60349105069     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.10.017     Document Type: Article

References (43)

1. Look D.C. Mater. Sci. Eng. B 80 (2001) 383
2. Sun X.W., and Kwok H.S. J. Appl. Phys. 86 (1999) 408
3. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., and Goto T. Appl. Phys. Lett. 70 (1997) 2230
4. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270
5. Yan H.Q., He R.R., Johnson J., Law M., Saykally R.J., and Yang P.D. J. Am. Chem. Soc. 125 (2003) 4728
6. Sun X.W., Huang J.Z., Wang J.X., and Xu Z. Nano Lett. 8 (2008) 1219
7. Burin A.L., Ratner M.A., Cao H., and Chang S.H. Phys. Rev. Lett. 88 (2002) 093904
8. Bouvy C., Chelnokov E., Zhao R., Marine W., Sporken R., and Su B.L. Nanotechnology 19 (2008) 105710
9. Aoki T., Hatanaka Y., and Look D.C. Appl. Phys. Lett. 76 (2000) 3257
10. Ryu Y.R., Lee T.S., Leem J.H., and White H.W. Appl. Phys. Lett. 83 (2003) 4032
11. Alivov Y.I., Kalinina E.V., Cherenkov A.E., Look D.C., Ataev B.M., Omaev A.K., Chukichev M.V., and Bagnall D.M. Appl. Phys. Lett. 83 (2003) 4719
12. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Mater. 4 (2005) 42
13. Ryu Y.R., Lee T.S., Lubguban J.A., White H.W., Kim B.J., Park Y.S., and Youn C.J. Appl. Phys. Lett. 88 (2006) 241108
14. Lim J.H., Kang C.K., Kim K.K., Park I.K., Hwang D.K., and Park S.J. Adv. Mater. 18 (2006) 2720
15. Zhao J.L., Sun X.W., Tan S.T., Lo G.Q., Kwong D.L., and Cen Z.H. Appl. Phys. Lett. 91 (2007) 263501
16. Sun X.W., Zhao J.L., Tan S.T., Tan L.H., Tung C.H., Lo G.Q., Kwong D.L., Zhang Y.W., Li X.M., and Teo K.L. Appl. Phys. Lett. 92 (2008) 111113
17. Könenkamp R., Word R.C., and Schlegel C. Appl. Phys. Lett. 85 (2004) 6004
18. Könenkamp R., Word R.C., and Godinez M. Nano Lett. 5 (2005) 2005
19. Ohta H., Orita M., Hirano M., and Hosono H. J. Appl. Phys. 89 (2001) 5720
20. Alivov Y.I., Van Nostrand J.E., Look D.C., Chukichev M.V., and Ataev B.M. Appl. Phys. Lett. 83 (2003) 2943
21. Yuen C., Yu S.F., Lau S.P., Rusli, and Chen T.P. Appl. Phys. Lett. 86 (2005) 241111
22. Kawazoe H., Yasukawa M., Hyodo H., Kurita M., Yanagi H., and Hosono H. Nature 389 (1997) 939
23. Banerjee A.N., and Chattopadhyay K.K. J. Appl. Phys. 97 (2005) 084308
24. Ueda K., Inoue S., Hirose S., Kawazoe H., and Hosono H. Appl. Phys. Lett. 77 (2000) 2701
25. Hiramatsu H., Ueda K., Ohta H., Orita M., Hirano M., and Hosono H. Thin Solid Films 411 (2002) 125
26. Yonooka K., Bando H., and Aiura Y. Thin Solid Films 445 (2003) 327
27. Banerjee A.N., Nandy S., Ghosh C.K., and Chattopadhyay K.K. Thin Solid Films 515 (2007) 7324
28. Ohta H., Kawamura K., Orita M., Hirano M., Sarukura N., and Hosono H. Appl. Phys. Lett. 77 (2000) 475
29. Hosono H., Ohta H., Hayashi K., Orita M., and Hirano M. J. Cryst. Growth 237-239 (2002) 496
30. Yang Y., Sun X.W., Tay B.K., Wang J.X., Dong Z.L., and Fan H.M. Adv. Mater. 19 (2007) 1839
31. Manifacier J.C., Gasiot J., and Fillard J.P. J. Phys. E 9 (1976) 1002
32. Pankove J.I. Optical Processes in Semiconductors (1971), Prentice-Hall Inc., New Jersey p. 34
33. Tan S.T., Chen B.J., Sun X.W., Fan W.J., Kwok H.S., Zhang X.H., and Chua S.J. J. Appl. Phys. 98 (2005) 013505
34. Yanagi H., Inoue S., Ueda K., kawazoe H., Hosono H., and Hamada N. J. Appl. Phys. 88 (2000) 4159
35. Robertson J., Peacock P.W., Towler M.D., and Needs R. Thin Solid Films 411 (2002) 96
36. Korsunska N.O., Borkovska L.V., Bulakh B.M., Khomenkova L.Yu., Kushnirenko V.I., and Markevich I.V. J. Lumin. 102-103 (2003) 733
37. Malpuech G., Glazov M.M., Shelykh I.A., Bigenwald P., and Kavokin K.V. Appl. Phys. Lett. 88 (2006) 111118
38. Vugt L.K., Rühle S., Ravindran P., Gerritsen H.C., Kuipers L., and Vanmaekelbergh D. Phys. Rev. Lett. 97 (2006) 147401
39. Park W.I., and Yi G. Adv. Mater. 16 (2004) 87
40. Smit G.D.J., Rogge S., and Klapwijk T.M. Appl. Phys. Lett. 81 (2002) 3852
41. Park W.I., Yi G., Kim J.W., and Park S.M. Appl. Phys. Lett. 82 (2003) 4358
42. Hauschild R., and Kalt H. Appl. Phys. Lett. 89 (2006) 123107
43. Matsuu M., Shimada S., Masuya K., Hirano S., and Kuwabara M. Adv. Mater. 18 (2006) 1617