Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 9, 2011, Pages 8202-8205

  Spee, D A ^a   Van Der Werf, C H M ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Hot wire CVD; Impermeable thin film encapsulation; Low temperature; Silicon nitride

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; DOUBLE LAYERS; EXTINCTION COEFFICIENTS; FLEXIBLE SUBSTRATE; FOURIER TRANSFORM INFRARED ABSORPTION SPECTRUM; FTIR; HF ETCHING; HIGH DENSITY; HIGH QUALITY; HOT WIRE CVD; HOT WIRES; LOW TEMPERATURES; LOW-TEMPERATURE SILICONS; NITRIDE MATERIALS; PEAK POSITION; POLY(GLYCIDYL METHACRYLATE); SUBSTRATE TEMPERATURE; THIN FILM ENCAPSULATION;

ACRYLIC MONOMERS; POLYMER FILMS; POROUS SILICON; REFRACTIVE INDEX; SILICON NITRIDE; SUBSTRATES; THIN FILMS; WIRE;

CHEMICAL VAPOR DEPOSITION;

EID: 84856872607     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.5100     Document Type: Conference Paper

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