Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors

Journal of Materials Science Letters

Volumn 18, Issue 17, 1999, Pages 1427-1431

  Cha, C L ^a   Chor, E F ^a   Jia, Y M ^a   Bourdillon, A J ^a   Gong, H ^a   Pan, J S ^b   Zhang, A Q ^c   Tang, S K ^d   Boothroyd, C B ^e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYSILICON FILM; SURFACE SMOOTHNESS;

GRAIN GROWTH;

EID: 0033189594     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006679625601     Document Type: Article

References (15)

1. A. H. CARIM and R. SINCLAIR, J. Electrochem. Soc.: Solid-State Sci. Tech. 134(3) (1987) 741.
2. F. L. TAN, J. Y. CHENG, Y. S. SHYH, S. C. TIEN and S. L. CHAO, IEEE Trans Elect. Dev. 18(6) (1991) 270.
3. O. TADAHIRO, M. MASAYUKI, I. MITSUSHI, I. TAKASHI and K. ICHIROH, IEEE Trans. Elect. Dev. 39(3) (1992) 532.
4. M. S. FENG, K. C. LIANG, C. Y. CHANG and L. Y. LIN, Mater. Chem. Phys. 31 (1992) 229.
5. M. C. V. LOPES and C. M. HASENACK, J. Electrochem. Soc. 139(10) (1992) 2909.
6. H. EIJI, I. AKIHIKO, A. KOICHI, T. MASARU and O. NORIKO, J. Electrochem. Soc. 142(1) (1995) 273.
7. M. NAOTO and S. AKIO, Solid-State Elec. 39(3) (1996) 337.
8. D. HANEMAN, N. S. McALPINE, E. BUSCH and C. KAALUND, Appl. Surf. Sci. 92 (1996) 484.
9. C. L. CHA, E. F. CHOR, H. GONG, A. Q. ZHANG and L. CHAN, Hong Kong Electron Devices Meeting (1997) 82.
10. C. L. CHA, E. F. CHOR, H. GONG, A. Q. ZHANG, L. CHAN and J. XIE, 7th Int'l Symp. on IC Tech., Sys. and Applications(ISIC-97), September 1997, pp. 356-359.
11. C. L. CHA, E. F. CHOR, H. GONG, A. Q. ZHANG, L. CHAN and J. XIE, in Proc. of SPIE: Microelect. Dev. Tech., 1997, Vol. 3212, pp. 368-375.
12. C. L. CHA, E. F. CHOR, H. GONG, A. Q. ZHANG, L. CHAN and J. XIE, Special Issue of Microelect. Reliab.: Advances in Submicron Dev. And Tech. (1998), in press.
13. D. M. SCHNEIDER, J. MAIBACH, E. OBERMEIER and D. SCHNEIDER, J. Micromech, Microeng. 5 (1995) 121.
14. S. M. SZE, "VLSI technology: second edition" (McGraw-Hill, Singapore, 1988) pp. 242-245.
15. J. S. PAN, A. T. S. WEE, C. H. A. HUAN, H. S. TAN and K. L. TAN, Appl. Surf. Sci. 115 (1997) 167.