Vertical transistor with ultrathin silicon nitride gate dielectric

Advanced Materials

Volumn 21, Issue 44, 2009, Pages 4505-4510

  Moradi, Maryam ^c,d   Nathan, Arokia ^a   Haverinen, Hanna M ^b,e   Jabbour, Ghassan E ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF WATERLOO   (Canada)

^d IGNIS Innovation Inc   (Canada)

^e UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIXES; CHANNEL LENGTH; FLAT PANEL; GATE CONTROL; GATE LEAKAGES; HIGH RESOLUTION; NANO SCALE; SEM IMAGE; ULTRATHIN SILICON; VERTICAL THIN-FILM TRANSISTORS; VERTICAL TRANSISTORS;

GATE DIELECTRICS; SILICON NITRIDE; THIN FILM TRANSISTORS;

GATES (TRANSISTOR);

EID: 72049117056     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200900757     Document Type: Article

References (33)

1. S. D. Brotherton, C. Glaister, P. Green, F. Rohlfing, J. R. Ayres, Appl. Phys. Lett. 2004, 84, 293.
2. A. I. Kingon, J. P. Maria, S. K. Streiffer, Nature 2000, 406, 1032.
3. C. D. Kim, M. Matsumura, IEEE Trans. Electron Devices 1996, 43, 2172.
4. M. L. Chabinyc, L. Jeng-Ping, R. A. Street, W. Yiliang, L. Ping, B. S. Ong, J. Appl. Phys. 2004, 96, 2063.
5. G. Lucovsky, J. Non-Cryst. Solids 1999, 254, 26.
6. P. A. Packan, Science 1999, 285, 2079.
7. M. Khare, X. Guo, X. W. Wang, T. P. Ma, G. J. Cui, T. Tamagawa, B. L. Halpers, J. J. Schmitt, Proc. On VLSI Technol. Symp. Dig. Of Tech. Paper, June 10-12, Kyoto, Japan 1997, 51.
8. A. Izumi, Thin Solid Films 2006, 501, 157.
9. J. D. Plummer, M. D. Deal, P. B. Griffin, Sillicon VLSI Technology Fundamentals, Practice and Modeling, Prentice Hall, Upper Saddle River, New Jersey 2000, Ch. 6, 562.
10. E. Y. Wu, R. P. Vollertsen, R. Jammy, A. Strong, C. Radens, 40th Annual International Reliability Phys. Symp. April 7-11, Dallas, TX 2002, 255.
11. K. Joohyun, J. S. Burnham, L. Yeeheng, L. Hongyue, C. Ing-Shin, L. J. Pilione, C. R. Wronski, R. W. Collins, Mater. Res. Soc. Symp. 1996, 69.
12. Y. Kuo, Vacuum 1998, 51, 741.
13. T. Karabacak, Y. P. Zhao, G. C. Wang, T. M. Lu, Phys. Rev. B 2002, 66, 075329.
14. D. L. Smith, J. Vac. Sci. Technol, A 1993, 11, 1843.
15. Y. Kuo, J. Electrochem. Soc. 1995, 142, 186.
16. R. A. Street, Hydrogenated Amorphous Silicon, Cambridge University press, Cambridge, New York 1991, Ch. 2, 58.
17. D. L. Smith, Proc. Mater. Res. Soc. Symp. 1994, 3.
18. M. Moradi, D. Striakhilev, I. Chan, A. Nathan, N. I. Cho, H. G. Nam, Proc. Mater. Res. Soc. Symp. 2007, 989, A08.
19. C. Monteil, B. Cros, R. Berjoan, J. Durand, J. Non-Cryst. Solids 1992, 151, 32.
20. W. S. Lau, S. J. Fonash, J. Kanicki, J. Appl. Phys. 1989, 66, 2765.
21. K. Hiranaka, T. Yoshimura, T. Yamaguchi, J. Appl. Phys. 1987, 62, 2129.
22. M. J. Powell, Appl. Phys. Lett. 1983, 43, 597.
23. N. Lustig, J. Kanicki, J. Appl. Phys. 1989, 65, 3951.
24. W. A. P. Claassen, W. G. J. N. Valkenburg, F. H. P. M. Habraken, Y. Tamminga, J. Electrochem. Soc. 1983, 130, 2419.
25. D. Striakhilev, A. Sazonov, A. Nathan, J. Vac. Sci. Technol, A 2002, 20, 1087.
26. G. Lucovsky, Solid State Commun. 1979, 29, 571.
27. J. W. Osenbach, W. R. Knolle, J. Appl. Phys. 1986, 60, 1408.
28. Y. Kuo, Appl. Phys. Lett. 1993, 63, 144.
29. S. Ishihara, T. Hirao, K. Mori, M. Kitagawa, M. Ohno, S. Kohiki, J. Appl. Phys. 1982, 53, 3909.
30. C. H. Lee, D. Striakhilev, A. Nathan, IEEE Trans. Electron Devices 2007, 54, 45.
31. M. J. Powell, W. Orton, Appl. Phys. Lett. 1984, 45, 171.
32. I. Solomon, R. Benferhat, Phys. Rev. B 1984, 30, 3422.
33. A. Rose, Phys. Rev. 1955, 97, 1538.