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Volumn 5, Issue 11, 2013, Pages 5051-5056

Advance in novel boron nitride nanosheets to nanoelectronic device applications

Author keywords

BNNSs; doping; Schottky diode; sensor; synthesis

Indexed keywords

BNNSS; BORON NITRIDE NANOSHEETS; BREAKDOWN ELECTRIC FIELD; LOW TEMPERATURE SYNTHESIS; NANOELECTRONIC DEVICES; OPERATING TEMPERATURE; SCHOTTKY DIODES; VOLTAGE CHARACTERISTICS;

EID: 84879080495     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400871s     Document Type: Article
Times cited : (110)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.