Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

Nano Research

Volumn 6, Issue 8, 2013, Pages 602-610

  Guo, Ning ^a   Wei, Jinquan ^a   Jia, Yi ^a   Sun, Huanhuan ^a   Wang, Yuhang ^b   Zhao, Kehan ^b   Shi, Xiaolan ^b   Zhang, Liuwan ^b   Li, Xinming ^a   Cao, Anyuan ^c   Zhu, Hongwei ^a   Wang, Kunlin ^a   Wu, Dehai ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b TSINGHUA UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

breakdown strength; capacitor; hexagonal boron nitride; tunneling effect

Indexed keywords

EID: 84881083404     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-013-0336-4     Document Type: Article

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