Atomic defects in monolayer titanium carbide (Ti3C2Tx) MXene

ACS Nano

Volumn 10, Issue 10, 2016, Pages 9193-9200

  Sang, Xiahan ^a   Xie, Yu ^a   Lin, Ming Wei ^a   Alhabeb, Mohamed ^b   Van Aken, Katherine L ^b   Gogotsi, Yury ^b   Kent, Paul R C ^a   Xiao, Kai ^a   Unocic, Raymond R ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Drexel University   (United States)

Author keywords

conductivity; defect; minimally intensive layer delamination (MILD); MXene; vacancy

Indexed keywords

CARBIDES; DEFECT DENSITY; DEFECT STRUCTURES; DEFECTS; DELAMINATION; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LITHIUM ALLOYS; LITHIUM COMPOUNDS; LITHIUM-ION BATTERIES; MONOLAYERS; POINT DEFECTS; PROBABILITY DENSITY FUNCTION; SCANNING ELECTRON MICROSCOPY; TRANSITION METAL COMPOUNDS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

DENSITY FUNCTION THEORY; ETCHANT CONCENTRATIONS; METALLIC CONDUCTIVITY; MINIMALLY INTENSIVE LAYER DELAMINATION (MILD); MXENE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TRANSITION METAL CARBIDE; VACANCY CONCENTRATION;

SURFACE DEFECTS;

EID: 84993945257     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b05240     Document Type: Article

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