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Volumn , Issue , 2014, Pages 1-5A

Carrier-selective, passivated contacts for high efficiency silicon solar cells based on transparent conducting oxides

Author keywords

ITO; passivated contacts; silicon; SiO2; solar cells

Indexed keywords

EFFICIENCY; INDIUM COMPOUNDS; SILICA; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; TIN DIOXIDE; TIN OXIDES; TRANSPARENT CONDUCTING OXIDES;

EID: 84912086989     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925147     Document Type: Conference Paper
Times cited : (36)

References (12)
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    • Passivated rear contacts for high-efficiency n-type si solar cells providing high interface passivation quality and excellent transport characteristics
    • Feldmann, F., M. Bivour, C. Reichel, M. Hermle, and Stefan W. Glunz, "Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics". Solar Energy Materials and Solar Cells, 120 p. 270, 2014.
    • (2014) Solar Energy Materials and Solar Cells , vol.120 , pp. 270
    • Feldmann, F.1    Bivour, M.2    Reichel, C.3    Hermle, M.4    Glunz, S.W.5
  • 5
    • 79959422282 scopus 로고    scopus 로고
    • Transparent conducting oxides for photovoltaics: Manipulation of fermi level, work function and energy band alignment
    • Klein, A., C. Korber, Andre Wachau, F. Sauberlich, Y. Gassenbauer, S.P. Harvey, D.E. Proffit, and T.O. Mason, "Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment". Materials, 3 p. 4892, 2010.
    • (2010) Materials , vol.3 , pp. 4892
    • Klein, A.1    Korber, C.2    Wachau, A.3    Sauberlich, F.4    Gassenbauer, Y.5    Harvey, S.P.6    Proffit, D.E.7    Mason, T.O.8
  • 7
    • 0019000101 scopus 로고
    • Asymmetry in the SiO2 tunneling barriers to electrons and holes
    • Ng, K.K. and H.C. Card, "Asymmetry in the SiO2 tunneling barriers to electrons and holes". Journal of Applied Physics, 51 p. 2153, 1980.
    • (1980) Journal of Applied Physics , vol.51 , pp. 2153
    • Ng, K.K.1    Card, H.C.2
  • 9
    • 0035307668 scopus 로고    scopus 로고
    • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
    • Kerr, M.J., J. Schmidt, A. Cuevas, and J.H. Bultman, "Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide". Journal of Applied Physics, 89 p. 3821, 2001.
    • (2001) Journal of Applied Physics , vol.89 , pp. 3821
    • Kerr, M.J.1    Schmidt, J.2    Cuevas, A.3    Bultman, J.H.4
  • 11
    • 84903193120 scopus 로고    scopus 로고
    • Available from
    • ∗2 at Research Level. 2014; Available from: http://panasonic.co.jp/corp/news/official.data/data.dir/2014/04/en140410-4/en140410-4.html.
    • (2014) ∗2 at Research Level
  • 12
    • 0007973697 scopus 로고
    • Interface states at the SiO2-si interface
    • Schulz, M., "Interface states at the SiO2-Si interface". Surface Science, 132 p. 422, 1983.
    • (1983) Surface Science , vol.132 , pp. 422
    • Schulz, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.