Atomistic-Scale Simulations of Defect Formation in Graphene under Noble Gas Ion Irradiation

ACS Nano

Volumn 10, Issue 9, 2016, Pages 8376-8384

  Yoon, Kichul ^a   Rahnamoun, Ali ^a   Swett, Jacob L ^b   Iberi, Vighter ^c,d   Cullen, David A ^d   Vlassiouk, Ivan V ^d   Belianinov, Alex ^d   Jesse, Stephen ^d   Sang, Xiahan ^d   Ovchinnikova, Olga S ^d   Rondinone, Adam J ^d   Unocic, Raymond R ^d   Van Duin, Adri C T ^a  

^a The Pennsylvania State University   (United States)

^b LOCKHEED MARTIN SPACE SYSTEMS COMPANY   (United States)

^c University of Tennessee   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

aberration corrected STEM; atomistic analysis of graphene; graphene defects; ion irradiation; ReaxFF

Indexed keywords

CARBON; DEFECTS; GRAPHENE; INERT GASES; IRRADIATION; NANOPORES; RADIATION;

ABERRATION-CORRECTED STEM; ATOMISTIC ANALYSIS; ATOMISTIC-SCALE SIMULATIONS; COLLISION CROSS SECTIONS; DEFECT FORMATION; GRAPHENE DEFECTS; REAXFF; VACANCY-TYPE DEFECTS;

ION BOMBARDMENT;

EID: 84989181103     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b03036     Document Type: Article

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