Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface

Physical Review Letters

Volumn 85, Issue 2, 2000, Pages 425-428

  Besombes, L ^a   Kheng, K ^a   Martrou, D ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MAGNETIC FIELDS; MICROSTRUCTURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

ATOMIC LAYER EPITAXY; DARK EXCITON STATE; LINEAR POLARIZATION; SINGLE ELONGATED ISLAND; VICINAL SURFACE; ZERO FIELD SPLITTING;

EXCITONS;

EID: 0034229474     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.425     Document Type: Article

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