Strong variation of the exciton g factors in self-assembled (formula presented) quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 12, 1999, Pages R8481-R8484

  Bayer, M ^a   Kuther, A ^a   Schafer F ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243241540     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.R8481     Document Type: Article

References (42)

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36. The emission intensities and spectral widths vary with the studied QD. The origin of these variations is not yet understood, but might be related to different influences of the lateral surfaces of the mesa structures on the QD’s.
37. The excited state emission for the QD types 2 and 3 cannot be attributed to the ground-state emission from a second QD in the mesa stucture. Besides its appearance already at low excitation, it shows a spin splitting that is considerably larger than that of a ground-state exciton.
38. The excess carrier is an equilibrium carrier because the observed splitting for a single QD does not vary with time. If the QD would be randomly charged, then at some time emission from excitons, respectively, biexcitons would be observed at characteristic energies. These emission features would disappear in case of the appearance of a charge in the QD. Instead, a new emission line would appear at different energies due to the Coulomb interaction of the exciton with the momentary excess carrier. Such behavior was observed at very high excitation powers significantly exceeding those used for the present studies.
39. The magnetic-field dependence of the type 1 QD emission is very similar to the behavior observed for QD’s fabricated without growth interruption (Ref. 12). There, a spin splitting of (Formula presented) meV was found at 8 T. However, for these QD’s only very few splittings with magnitudes as small as those for QD types 2 and 3 have been observed. The frequency of observing charged exciton emission is (Formula presented) for QD’s fabricated without, whereas it is (Formula presented) for the structures with growth interruption.
40. In spatially inhomogeneous crystals as QD samples are, compensation effects between donors and acceptors will not necessarily occur, because the carriers will be captured in the QD’s so that diffusion is suppressed.
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