-
1
-
-
0001612762
-
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
-
J. Schmidt and A. Cuevas, "Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon," J. Appl. Phys., vol. 86, pp. 3175-3180, 1999. (Pubitemid 129648249)
-
(1999)
Journal of Applied Physics
, vol.86
, Issue.6
, pp. 3175-3180
-
-
Schmidt, J.1
Cuevas, A.2
-
2
-
-
84888346888
-
Light induced degradation of rear passivated mc-Si solar cells
-
Frankfurt, Germany
-
K. Ramspeck, S. Zimmermann, H. Nagel, A. Metz, Y. Gassenbauer, B. Birkmann, and A. Seidl, "Light induced degradation of rear passivated mc-Si solar cells," in Proc. 27th Eur. Photovoltaic Solar Energy Conf., Frankfurt, Germany, 2012, pp. 861-865.
-
(2012)
Proc. 27th Eur. Photovoltaic Solar Energy Conf.
, pp. 861-865
-
-
Ramspeck, K.1
Zimmermann, S.2
Nagel, H.3
Metz, A.4
Gassenbauer, Y.5
Birkmann, B.6
Seidl, A.7
-
3
-
-
84891329633
-
Bifacial n-type cells with >20% front-side efficiency for low-cost production
-
presented at the Austin, TX, USA, Jun
-
T. S. B̈oscke, D. Kania, A. Helbig, T. Roth, C. Scḧollhorn, M. Dupke, P. Sadler,M. Braun, D. Stichtenoth, T.Ẅutherich, R. Jesswein, D. Fiedler, R. Carl, J. Lossen, and H.-J. Krokoszinski, "Bifacial n-type cells with >20% front-side efficiency for low-cost production," presented at the 38th IEEE Photovoltaic Spec. Conf., Austin, TX, USA, Jun, 2012.
-
(2012)
38th IEEE Photovoltaic Spec. Conf.
-
-
B̈oscke, T.S.1
Kania, D.2
Helbig, A.3
Roth, T.4
Scḧollhorn, C.5
Dupke, M.6
Sadler, P.7
Braun, M.8
Stichtenoth, D.9
Ẅutherich, T.10
Jesswein, R.11
Fiedler, D.12
Carl, R.13
Lossen, J.14
Krokoszinski, H.-J.15
-
4
-
-
80052094811
-
High efficiency selective emitter cells using in-situ patterned ion implantation
-
Valencia, Spain, Sep.
-
A.Gupta, R. J. Low, N. Bateman,D.Ramappa, H.-J. L. Gossman,Q. Zhai, P. Sullivan, W. Skinner, C. Dub́e, B. Tsefrekas, and J. Mullin, "High efficiency selective emitter cells using in-situ patterned ion implantation," in Proc. 25th Eur. Photovoltaic Solar Energy Conf., Valencia, Spain, Sep. 6-10, 2010, pp. 1158-1162.
-
(2010)
Proc. 25th Eur. Photovoltaic Solar Energy Conf.
, vol.6-10
, pp. 1158-1162
-
-
Gupta, A.1
Low, R.J.2
Bateman, N.3
Ramappa, D.4
Gossman, H.-J.L.5
Zhai, Q.6
Sullivan, P.7
Skinner, W.8
Dub́e, C.9
Tsefrekas, B.10
Mullin, J.11
-
5
-
-
84891558481
-
Mass production implementation of soliton ion implantation technology
-
Frankfurt, Germany
-
W. Han, W. Shan, Q. Jiang, Y. Li, Z. Qiu, J. Li, and Q. Zhai, "Mass production implementation of soliton ion implantation technology," in Proc. 27th Eur. Photovoltaic Solar Energy Conf. Exhib., Frankfurt, Germany, 2012, pp. 1498-1502.
-
(2012)
Proc. 27th Eur. Photovoltaic Solar Energy Conf. Exhib.
, pp. 1498-1502
-
-
Han, W.1
Shan, W.2
Jiang, Q.3
Li, Y.4
Qiu, Z.5
Li, J.6
Zhai, Q.7
-
6
-
-
84891559444
-
Ion implantation for n-type solar cells
-
presented at the Amsterdam, The Netherlands, May
-
N. Bateman, "Ion implantation for n-type solar cells," presented at the nPV-Workshop 2012, Amsterdam, The Netherlands, May 14-15, 2012.
-
(2012)
NPV-Workshop 2012
, pp. 14-15
-
-
Bateman, N.1
-
7
-
-
84869381237
-
Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cell
-
Jun.
-
O. Young-Woo, A. D. Upadhyaya, T. Yugou, F. Zimbardi, S. Ning, and A. Rohatgi, "Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cell," in Proc. 38th IEEE Photovoltaic Spec. Conf., Jun. 3-8, 2012, pp. 2240-2243.
-
(2012)
Proc. 38th IEEE Photovoltaic Spec. Conf.
, vol.3-8
, pp. 2240-2243
-
-
Young-Woo, O.1
Upadhyaya, A.D.2
Yugou, T.3
Zimbardi, F.4
Ning, S.5
Rohatgi, A.6
-
8
-
-
84869462416
-
Ionimplant doped large-area n-type Czochralski high-efficiency industrial solar cells
-
Jun.
-
M. Sheoran, M. Emsley, Y. Min, D. Ramappa, and P. Sullivan, "Ionimplant doped large-area n-type Czochralski high-efficiency industrial solar cells," in Proc. 38th IEEE Photovoltaic Spec. Conf., Jun. 3-8, 2012, pp. 2254-2257.
-
(2012)
Proc. 38th IEEE Photovoltaic Spec. Conf.
, vol.3-8
, pp. 2254-2257
-
-
Sheoran, M.1
Emsley, M.2
Min, Y.3
Ramappa, D.4
Sullivan, P.5
-
9
-
-
80052095463
-
In-depth analysis of transient errors of inline IV measurements
-
T. Roth, D. Wichmann, K. Meyer, and M. Orlob, "In-depth analysis of transient errors of inline IV measurements," Energy Procedia, vol. 8, pp. 82-87, 2011.
-
(2011)
Energy Procedia
, vol.8
, pp. 82-87
-
-
Roth, T.1
Wichmann, D.2
Meyer, K.3
Orlob, M.4
-
10
-
-
0041511968
-
Dissolution kinetics of boron-interstitial clusters in silicon
-
S. Mirabella, E. Bruno, F. Priolo, D. De Salvador, E. Napolitani, A. V. Drigo, and A. Carnera, "Dissolution kinetics of boron-interstitial clusters in silicon," Appl. Phys. Lett., vol. 83, pp. 680-682, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 680-682
-
-
Mirabella, S.1
Bruno, E.2
Priolo, F.3
De Salvador, D.4
Napolitani, E.5
Drigo, A.V.6
Carnera, A.7
|