High-efficiency large area ion-implanted n-type front junction Si solar cells with screen-printed contacts and SiO2 passivated boron emitters

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Volumn , Issue , 2014, Pages 3654-3658

  Tao, Yuguo ^a   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

front junction; ion implanted; laser opening; n type; PVD; SiO2 passivated

Indexed keywords

ASPECT RATIO; BORON; EFFICIENCY; ION IMPLANTATION; IONS; METALLIZING; PASSIVATION; PHYSICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS;

BACK SURFACE FIELDS; CELL EFFICIENCY; EMITTER SATURATION CURRENT DENSITY; FRONT JUNCTION; HIGH-EFFICIENCY; ION IMPLANTED; SIO2 PASSIVATED; TECHNICAL IMPROVEMENT;

SILICON SOLAR CELLS;

EID: 84912078132     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6924900     Document Type: Conference Paper

References (13)

1. A. Rohagti, D. Meier, B. Mcperson, Y. Ok, A.D. Upadhyaya, J. Lai, and F. Zimbardi, "High-throughput ion-implantation for low-cost high-efficiency silicon solar cells", Energy Procedia 15 (2012): 10-19.
2. M. Hermle, J. Benick, M. Rüdiger, N. Bateman, S.W. Glunz, "N-type silicon solar cells with implanted emitter", 26th European Photovoltaic Solar Energy Conference, Hamburg, Germany, September 2011.
3. D.L. Meier, V. Chandrasekaran, H.P. Davis, A.M. Payne, X. Wang, V. Yelundur, J.E. O'Neill, Y.-W. Ok, F. Zimbardi, and A. Rohatgi, "N-type, ion-implanted silicon solar cells and modules", Photovoltaics, IEEE Journal of Photovoltaics 1.2 (2011): 123-129.
4. D. Macdonald, L.J. Geerligs, "Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon", Appl. Phys. Lett. 2004; 85:4061-3.
5. S.W. Glunz, S. Rein, J.Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon", J. Appl. Phys. 2001; 90:2397-404.
6. T.S. Böscke, D. Kania, C. Schöllhorn, D. Stichtenoth, A. Helbig, P. Sadler, M. Braun, M. Dupke, M. Weiß, A. Grohe, J. Lossen, and H.-J. Krokoszinski, "Fully ion implanted and coactivated industrial n-type cells with 20.5% efficiency", IEEE Journal of Photovoltaics, Vol. 4, No. 1 (2014) 48-51.
7. K. Ryu, A. Upadhyaya, H. Song, C. Choi, A. Rohatgi, and Y. Ok, "Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells", Appl. Phys. Lett. 101, 073902 (2012).
8. D.A. Clugston, and P.A. Basore, "PC1D version 5: 32-bit solar cell modeling on personal computers", 26th IEEE PVSC (1997) pp. 207-210.
9. T. Ballmann, "Comparison of front and rear collecting doubleside contacted n-type silicon solar cells", nPV workshop, May 2012.
10. Y. Tao, Y.-W. Ok, F. Zimbardi, A. Upadhyaya, J. Lai, S. Ning, V. Upadhyaya, A. Rohatgi, "Fully ion-implanted and screen-printed 20.2% efficient front junction silicon cells on 239 cm2 N-type Cz substrate", IEEE Journal of Photovoltaics, Vol. 4, No. 1 (2014) 58-63.
11. Y. Tao, A. Payne, V.D. Upadhyaya, A. Rohatgi, "20.7% efficient ion-implanted large area n-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition", publication in process.
12. J. Wong, "Griddler: Advanced solar cell metallization simulation and computer aided design", 4th Workshop on Metallization for Crystalline Silicon Solar Cell, Konstanz, Germany, 2013.
13. 3", Applied Physics Letter 91, 112107 (2007).