Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Jang, Jisu ^a   Son, Myungwoo ^a   Chung, Sunki ^a   Kim, Kihyeun ^a   Cho, Chunhum ^a   Lee, Byoung Hun ^a   Ham, Moon Ho ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84949599448     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep17955     Document Type: Article

References (38)

1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183-191 (2007).
2. Bolotin, K. I. et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 156, 351-355 (2008).
3. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722-726 (2010).
4. Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385-388 (2008).
5. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
6. Hernandez, Y. et al. High-yield production of graphene by liquid-phase exfoliation of graphite. Nat. Nanotechnol. 3, 563-568 (2008).
7. Lotya, M. et al. Liquid phase production of graphene by exfoliation of graphite in surfactant/water solutions. J. Am. Chem. Soc. 131, 3611-3620 (2009).
8. Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 8, 203-207 (2009).
9. Hertel, S. et al. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nat. Commun. 3, 957 (2012).
10. Reina, A. et al. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 9, 30-35 (2008).
11. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312-1314 (2009).
12. Kim, K. S. et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 457, 706-710 (2009).
13. Bae, S. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 5, 574-578 (2010).
14. Son, J. G. et al. Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography. Adv. Mater. 25, 4723-4728 (2013).
15. Sun, Z. et al. Growth of graphene from solid carbon sources. Nature 468, 549-552 (2010).
16. Byun, S. J. et al. Graphene converted from polymers. J. Phys. Chem. Lett. 2, 493-497 (2011).
17. Peng, K. J. et al. Hydrogen-free PECVD growth of few-layer graphene on an ultra-thin nickel film at the threshold dissolution temperature. J. Mater. Chem. C 1, 3862-3870 (2013).
18. Cheng, L. et al. Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD. J. Mater. Chem. C 3, 5192-5198 (2015).
19. Li, Z. et al. Low-temperature growth of graphene by chemical vapor deposition using solid and liquid carbon sources. ACS Nano 5, 3385-3390 (2011).
20. Zhang, B. et al. Low-temperature chemical vapor deposition growth of graphene from toluene on electropolished copper foils. ACS Nano 6, 2471-2476 (2012).
21. Choi, J. H. et al. Drastic reduction in the growth temperature of graphene on copper via enhanced London dispersion force. Sci. Rep. 3, 1925 (2013).
22. Dransfield, T. J., Perkins, K. K., Donahue, N. M. & Anderson, J. G. Temperature and pressure dependent kinetics of the gas-phase reaction of the hydroxyl radical with nitrogen dioxide. Geophys. Res. Lett. 26, 687-690 (1999).
23. 4 over the temperature range 298-595 K. An example of a third-body mediated association. J. Phys. Chem. 98, 5303-5309 (1994).
24. Bhaviripudi, S., Jia, X., Dresselhaus, M. S. & Kong, J. Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst. Nano Lett. 10, 4128-4133 (2010).
25. Reckinger, N., Felten, A., Santos, C. N., Hackens, B. & Colomer, J. F. The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition. Carbon 63, 84-91 (2013).
26. Choubak, S., Biron, M., Levesque, P. L., Martel, R. & Desjardins, P. No graphene etching in purified hydrogen. J. Phys. Chem. Lett. 4, 1100-1103 (2013).
27. Liu, L. et al. Graphene oxidation: thickness-dependent etching and strong chemical doping. Nano Lett. 8, 1965-1970 (2008).
28. Starodub, E., Bartelt, N. C. & McCarty, K. F. Oxidation of graphene on metals. J. Phys. Chem. C 114, 5134-5140 (2010).
29. Kumar, A., Voevodin, A. A., Zemlyanov, D., Zakharov, D. N. & Fisher, T. S. Rapid synthesis of few-layer graphene over Cu foil. Carbon 50, 1546-1553 (2012).
30. Kwak, J. et al. Near room-temperature synthesis of transfer-free graphene films. Nat. Commun. 3, 645 (2012).
31. 2/Si substrate: thermal conductivity of the wafers. Appl. Phys. Lett. 96, 083101 (2010).
32. Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308 (2008).
33. Li, X. et al. Synthesis, characterization, and properties of large-area graphene films. ECS Trans. 19, 41-52 (2009).
34. Xue, Y. et al. Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition. J. Am. Chem. Soc. 134, 11060-11063 (2012).
35. Günes, F. et al. Layer-by-layer doping of few-layer graphene film. ACS Nano 4, 4595-4600 (2010).
36. Han, Q. et al. Construction of carbon-based two-dimensional crystalline nanostructure by chemical vapor deposition of benzene on Cu(111). Nanoscale 6, 7934-7939 (2014).
37. Hao, Y. et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 342, 720-723 (2013).
38. Li, X. et al. Transfer of large-area graphene films for high-performance transparent conductive electrodes. Nano Lett. 9, 4359-4363 (2009).